AOD7B65M3 650v, 7a alpha igbt tm with soft and fast recovery anti-parallel diode general description product summary v ce i c (t c =100c) 7a v ce(sat) (t j =25c) 1.87v applications ? motor drives ? home appliance applications such as refrigerators and washing machines ? fan, pumps, vacuum cleaner ? other hard switching applications ? latest alphaigbt ( igbt) technology ? 650v breakdown voltage ? very fast and soft recovery freewheeling diode ? high efficient turn-on di/dt controllability ? low vce(sat) enables high efficiencies ? low turn-off switching loss and softness ? very good emi behavior ? high short-circuit ruggedness 650v e c g c top view to-252 dpak bottom view g c symbol v ce v ge i cm i lm diode pulsed current, limited by t jmax i fm t sc t j , t stg t l symbol r q ja r q jc r q jc 1) allowed number of short circuits: <1000; time be tween short circuits: >1s. minimum order quantity 2500 package type to252 form tape & reel continuous diode forward current t c =25c i f 10 a t c =100c continuous collector current t c =25c 5 14 7 30 v a i c turn off soa, v ce 650v, limited by t jmax pulsed collector current, limited by t jmax gate-emitter voltage t c =100c a a parameter 21 a 21 maximum junction-to-ambient 5 m s t c =100c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c power dissipation p d short circuit withstanding time 1) v ge = 15v, v cc 400v, t j 150c junction and storage temperature range t c =25c thermal characteristics maximum diode junction-to-case c/w 1.8 maximum igbt junction-to-case v units parameter absolute maximum ratings t a =25c unless otherwise noted AOD7B65M3 collector-emitter voltage 650 orderable part number AOD7B65M3 c/w 5.5 300 -55 to 150 69 c/w 55 28 c 21 AOD7B65M3 w units g e e AOD7B65M3 g e rev.1.0: february 2016 www.aosmd.com page 1 of 9
symbol min typ max units bv ces collector-emitter breakdown voltage 650 - - v t j =25c - 1.87 2.35 t j =125c - 2.34 - t j =150c - 2.47 - t j =25c - 2.1 2.6 t j =125c - 2.04 - t j =150c - 2 - v ge(th) gate-emitter threshold voltage - 5.1 - v t j =25c - - 10 t j =125c - - 500 t j =150c - - 1000 i ges gate-emitter leakage current - - 100 na g fs - 3.6 - s c ies - 348 - pf c oes - 36 - pf c res - 13 - pf q g - 14 - nc q ge - 3.2 - nc q gc - 6.7 - nc i c(sc) - 30 - a r g - 6 - w t d(on) - 6 - ns t r - 14 - ns t d(off) - 79 - ns t f - 20 - ns e on - 0.108 - mj e off - 0.099 - mj e total - 0.208 - mj t rr - 212 - ns q rr - 0.29 - m c i rm - 3 - a t d(on) - 6 - ns t r - 15 - ns t d(off) - 94 - ns t f - 42 - ns e on - 0.113 - mj e off - 0.16 - mj e total - 0.273 - mj t rr - 273 - ns q rr - 0.45 - m c i rm - 3.5 - a this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. t j =150c i f =7a, di/dt=200a/ m s, v cc =400v diode reverse recovery chargediode peak reverse recovery current turn-on delaytime t j =150c v ge =15v, v cc =400v, i c =7a, r g =43 w turn-on rise timeturn-off delay time turn-off fall time turn-on energy diode reverse recovery time turn-off energytotal switching energy turn-off energy turn-on rise time turn-on delaytime switching parameters, (load inductive, t j =150c) diode reverse recovery timediode reverse recovery charge diode peak reverse recovery current t j =25c i f =7a, di/dt=200a/ m s, v cc =400v turn-off delay time t j =25c v ge =15v, v cc =400v, i c =7a, r g =43 w total switching energy turn-off fall timeturn-on energy gate to collector charge gate to emitter charge v ge =15v, v cc =520v, i c =7a switching parameters, (load inductive, t j =25c) short circuit collector current v ge =15v, v cc =400v, t sc 5us, t j 150c total gate charge gate resistance v ge =0v, v cc =0v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions reverse transfer capacitance v ge =0v, v cc =25v, f=1mhz v ce =20v, i c =7a v ce =0v, v ge =30v forward transconductance v ce(sat) i c =1ma, v ge =0v, t j =25c v ge =15v, i c =7a v v ce =650v, v ge =0v v ge =0v, i c =7a v collector-emitter saturation voltageoutput capacitance input capacitance i ces zero gate voltage collector current v f diode forward voltage dynamic parameters m a v ce =5v, i c =1ma rev.1.0: february 2016 www.aosmd.com page 2 of 9
typical electrical and thermal characteristics 0 3 6 9 12 15 0 1 2 3 4 5 i f (a) v f (v) figure 4: diode characteristic 25 c 150 c -40 c 0 5 10 15 20 25 0 1 2 3 4 5 6 7 i c (a) v ce (v) figure 1: output characteristic (t j =25c ) 9 v 20v 17 v 15v 11v v ge = 7v 13v 0 3 6 9 12 15 3 6 9 12 15 i c (a) v ge (v) figure 3: transfer characteristic 150 c 25 c -40 c v ce =20v 0 5 10 15 20 25 0 1 2 3 4 5 6 7 i c (a) v ce (v) figure 2: output characteristic (t j =150c ) v ge =7v 9 v 20v 17v 15v 11v 13v 0 1 2 3 4 5 6 0 25 50 75 100 125 150 v ce(sat) (v) temperature (c) figure 5: collector-emitter saturation voltage vs. junction temperature i c =14a i c =3.5a i c =7a 0 0.5 1 1.5 2 2.5 3 3.5 0 25 50 75 100 125 150 v sd (v) temperature (c ) figure 6: diode forward voltage vs. junction temperature 14a 7a if=1a rev.1.0: february 2016 www.aosmd.com page 3 of 9
typical electrical and thermal characteristics 0 3 6 9 12 15 0 4 8 12 16 20 v ge (v) q g (nc) figure 7: gate-charge characteristics v ce =520v i c =7a 0 20 40 60 80 100 25 50 75 100 125 150 power disspation (w) t case (c) figure 10: power disspation as a function of case 1 10 100 1000 10000 0 8 16 24 32 40 capacitance (pf) v ce (v) figure 8: capacitance characteristic c ies c res c oes 0 3 6 9 12 15 18 25 50 75 100 125 150 current rating i c (a) t case (c) figure 11: current de-rating 1e-09 1e-08 1e-07 1e-06 1e-05 1e-04 1e-03 0 25 50 75 100 125 150 i ce(s) (a) temperature (c ) figure 12: diode reverse leakage current vs. junction temperature v ce =650v v ce =520v rev.1.0: february 2016 www.aosmd.com page 4 of 9
typical electrical and thermal characteristics 1 10 100 1000 10000 3 5 7 9 11 13 15 switching time (ns) i c (a) figure 13: switching time vs. i c (t j =150c,v ge =15v,v ce =400v,r g =43 w ) td(off) tf td(on) tr 1 10 100 1000 10000 0 100 200 300 400 500 switching time (ns) r g ( w ) figure 14: switching time vs. r g (t j =150c,v ge =15v,v ce =400v,i c =7a) td(off) tf td(on) tr 1 10 100 1000 10000 25 50 75 100 125 150 switching time (ns) t j (c) figure 15 : switching time vs.t j td(off) tf td(on) tr 1 2 3 4 5 6 7 0 25 50 75 100 125 150 v ge(th) (v) t j (c) figure 16: v vs. t figure 15 : switching time vs.t j (v ge =15v,v ce =400v,i c =7a,r g =43 w ) figure 16: v ge(th) vs. t j rev.1.0: february 2016 www.aosmd.com page 5 of 9
typical electrical and thermal characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 3 5 7 9 11 13 15 switching energy (mj) i c (a) figure 17: switching loss vs. i c (t j =150c,v ge =15v,v ce =400v,r g =43 w ) eoff eon etotal 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 100 200 300 400 500 switching energy (mj) r g ( w ) figure 18: switching loss vs. r g (t j =150c,v ge =15v,v ce =400v,i c =7a) eoff eon etotal 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 25 50 75 100 125 150 switching energy (mj) eoff eon etotal 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 200 250 300 350 400 450 500 switching energ y (mj) eoff eon etotal 25 50 75 100 125 150 t j (c) figure 19: switching loss vs. t j (v ge =15v,v ce =400v,i c =7a,r g =43 w ) 200 250 300 350 400 450 500 v ce (v) figure 20: switching loss vs. v ce (t j =150c,v ge =15v,i c =7a,r g =43 w ) rev.1.0: february 2016 www.aosmd.com page 6 of 9
typical electrical and thermal characteristics 0 5 10 15 20 25 0 80 160 240 320 400 3 5 7 9 11 13 15 s t rr (ns) i f (a) figure 22: diode reverse recovery time and softness factor vs. conduction current (v ge =15v,v ce =400v,di/dt=200a/ m s) 150 c 25 c 150 c 25 c t rr s 0 3 6 9 12 15 18 0 100 200 300 400 500 600 3 5 7 9 11 13 15 i rm (a) q rr (nc) i f (a) figure 21: diode reverse recovery charge and peak current vs. conduction current (v ge =15v,v ce =400v,di/dt=200a/ m s) 25 c 150 c 150 c 25 c q rr i rm 0 5 10 15 20 25 0 80 160 240 320 400 50 100 150 200 250 300 350 400 s t rr (ns) di/dt (a/ m s) 25 c 150 c 25 c 150 c t rr s 0 3 6 9 12 15 18 0 100 200 300 400 500 600 50 100 150 200 250 300 350 400 i rm (a) q rr (nc) di/dt (a/ m s) 150 c 25 c 150 c 25 c q rr i rm di/dt (a/ m s) figure 24: diode reverse recovery time and softness factor vs. di/dt (v ge =15v,v ce =400v,i f =7a) di/dt (a/ m s) figure 23: diode reverse recovery charge and peak current vs. di/dt (v ge =15v,v ce =400v,i f =7a) rev.1.0: february 2016 www.aosmd.com page 7 of 9
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z q jc normalized transient thermal resistance pulse width (s) figure 25: normalized maximum transient thermal imp edance for igbt d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =1.8 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z q jc normalized transient thermal resistance pulse width (s) figure 26: normalized maximum transient thermal imp edance for diode d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =5.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm rev.1.0: february 2016 www.aosmd.com page 8 of 9
figure a: gate charge test circuit & waveforms figure b: inductive switching test circuit & waveforms figure c: diode recovery test circuit & waveforms rev.1.0: february 2016 www.aosmd.com page 9 of 9
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